FDN336P ON Semiconductor

FDN336P electronic component of ON Semiconductor
FDN336P ON Semiconductor
FDN336P MOSFETs
FDN336P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDN336P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN336P MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDN336P
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Datasheet: FDN336P Datasheet (PDF)
Price (USD)
3000: USD 0.1751 ea
Line Total: USD 525.3 
Availability : 8730
  
Ship by Tue. 28 Oct to Mon. 03 Nov
QtyUnit Price
3000$ 0.1751
6000$ 0.1734
9000$ 0.1344
24000$ 0.09

Availability 84390
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.108
9000$ 0.1014
15000$ 0.1002
45000$ 0.0978
75000$ 0.0956


Availability 1218
Ship by Fri. 24 Oct to Tue. 28 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.686
10$ 0.5376
50$ 0.3934
72$ 0.2702
100$ 0.2688


Availability 53
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4042
50$ 0.3208
150$ 0.1925
500$ 0.1625
3000$ 0.1491
6000$ 0.1409


Availability 4559
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 2216
Multiples : 1
QtyUnit Price
2216$ 0.2116
10000$ 0.1886
100000$ 0.158


Availability 8730
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1751
6000$ 0.1734
9000$ 0.1344
24000$ 0.09


Availability 2910
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2277


Availability 3458
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 2216
Multiples : 1
QtyUnit Price
2216$ 0.2116
10000$ 0.1886
100000$ 0.158

   
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

FDN336P Alternative Parts

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We are delighted to provide the FDN336P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN336P and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image FDN337N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN336P FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET Features General Description 1.3 A, 20 V. R = 0.20 V = 4.5 V DS(ON) GS This P-Channel 2.5V specified MOSFET is produced R = 0.27 V = 2.5 V using ON Semiconductors advanced DS(ON) GS PowerTrench process that has been especially tailored Low gate charge (3.6 nC typical) to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. High performance trench technology for extremely low R DS(ON) These devices are well suited for portable electronics applications: load switching and power management, TM SuperSOT -3 provides low R and 30% DS(ON) battery charging circuits and DC/DC conversion. higher power handling capability than SOT23 in the same footprint D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS I Drain Current Continuous (Note 1a) A D 1.3 Pulsed 10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 75 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 336 FDN336P 7 8mm 3000 units Publication Order Number: 2005 Semiconductor Components Industries, LLC. FDN336P/D October-2017, Rev. 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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