X-On Electronics has gained recognition as a prominent supplier of SVF2N60MJ mosfet across the USA, India, Europe, Australia, and various other global locations. SVF2N60MJ mosfet are a product manufactured by Silan. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SVF2N60MJ

Name: SVF2N60MJ
Brand: Silan
SKU: SVF2N60MJ_Silan
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	SVF2N60MJ
Manufacturer:	Silan
Category:	MOSFET
Description:	MOSFET N Trench 600V 2A 4V @ 250uA 4.2 O @ 1A,10V TO-251 (I-PAK) RoHS
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.1157 ea
Line Total: USD 11.57

Availability - 0

MOQ: 100 Multiples: 1
Pack Size: 1

SVF2N60MJ More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 07 Jun to Wed. 12 Jun MOQ : 100 Multiples : 1	100 : USD 0.1157 500 : USD 0.1114 1000 : USD 0.1114 2550 : USD 0.107

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We proudly offer the SVF2N60MJ MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SVF2N60MJ MOSFET.

Additional Infomation About Product

The SVF2N60MJ MOSFET from Silan is a three-terminal device with an I-PAK (TO-251) package, compliant with RoHS (Restriction of Hazardous Substances) regulations. This N-channel MOSFET operates in the 600V voltage range with a 2A current carrying capability and has a maximum on-state resistance of 4.2 Ohms. The device features a 4V @ 250uA gate-to-source threshold voltage and 10V gate-to-source maximum voltage. It is designed for efficient switching applications due to its trench gate structure.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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