SVF2N60MJ Silan

SVF2N60MJ electronic component of Silan
SVF2N60MJ Silan
SVF2N60MJ MOSFETs
SVF2N60MJ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SVF2N60MJ MOSFETs across the USA, India, Europe, Australia, and various other global locations. SVF2N60MJ MOSFETs are a product manufactured by Silan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.SVF2N60MJ
Manufacturer:Silan
Category:MOSFETs
Description:MOSFET N Trench 600V 2A 4V @ 250uA 4.2 O @ 1A,10V TO-251 (I-PAK) RoHS
Datasheet:
Shipping Charges:Click here for details
AI Image
Price (USD)
  
100: USD 0.1246 ea
Line Total: USD 12.46 
Availability : 0
  
QtyUnit Price
100$ 0.1246
500$ 0.12
1000$ 0.12
2550$ 0.1152
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.1246
500$ 0.12
1000$ 0.12
2550$ 0.1152

   
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We are delighted to provide the SVF2N60MJ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SVF2N60MJ and other electronic components in the MOSFETs category and beyond.

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The SVF2N60MJ MOSFET from Silan is a three-terminal device with an I-PAK (TO-251) package, compliant with RoHS (Restriction of Hazardous Substances) regulations. This N-channel MOSFET operates in the 600V voltage range with a 2A current carrying capability and has a maximum on-state resistance of 4.2 Ohms. The device features a 4V @ 250uA gate-to-source threshold voltage and 10V gate-to-source maximum voltage. It is designed for efficient switching applications due to its trench gate structure.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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