Product Information

SVF2N60F(S)

SVF2N60F(S) electronic component of Silan

Datasheet
MOSFET N Trench 600V 2A 4V @ 250uA 4.2 Ω @ 1A,10V TO-220F RoHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
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Additional Infomation About Product

The SVF2N60F(S) is a MOSFET N Trench 600V 2A 4V @ 250uA 4.2 O @ 1A, 10V TO-220F RoHS manufactured by Silan. It is a Power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high current switching applications. This MOSFET features a 600V drain-source breakdown voltage, 2A, a Gate-Source Voltage of 4V @ 2A, and a Gate-Source Voltage of 4.2 O @ 1A, 10V (max). The device is housed in a TO-220F package, making it suitable for a variety of applications such as power conversions, DC/DC converters, motor drives, and other power switching applications. It is RoHS compliant, meaning that it meets all relevant environmental standards to ensure that it is safe for use in consumer applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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