Product Information

SVF5N60F

SVF5N60F electronic component of Silan

Datasheet
MOSFET N Trench 600V 5A (Tc) 4V @ 250uA 2.15 Ω @ 2.5A,10V TO-220F (TO-220IS) RoHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3706 ea
Line Total: USD 0.37

2975 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2748 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SVF5N60F
Silan

1 : USD 0.3617
10 : USD 0.2835
50 : USD 0.2352
100 : USD 0.2176
500 : USD 0.2088
1000 : USD 0.2045

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

MicroelectronicsThe SVF5N60F is a MOSFET N Trench manufactured by Silan Microelectronics with 600V 5A (Tc) 4V @ 250uA 2.15 O @ 2.5A, 10V TO-220F (TO-220IS) RoHS. It is designed for use in power switching (DC-DC converters, motor control, electrical power supplies, etc.). It features low on-state resistance (2.15O @ 2.5A), low gate charge (10V) and low threshold voltage (4V @ 250uA). Its package is a TO-220F (TO-220IS) RoHS package which provides exceptional thermal and electrical performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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