JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SOT-23 CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS 3. DRAIN z Load Switch for Portable Devices z DC/DC Converter MARKING: S6 Maximum ratings (at T =25 unless otherwise noted) A Parameter Symbol Value Unit Drain-Source voltage V 30 DS V Gate-Source Voltage V 20 GS a,b Continuous Drain Current (T =150) I 3.16 J D A Pulsed Drain Current I 20 DM a,b Continuous Source Current(Diode Conduction) I 0.62 S a,b Maximum Power Dissipation P 0.75 W D Thermal Resistance from Junction to Ambient (t5s) R 100 /W JA Operating Junction and Storage Temperature Range T T -55 to150 J, stg Notes : a. Surface Mounted on 1 1 FR4 board, t 5s. b. Pulse width limited by maximum junction temperature. A,May,2012 Electrical characteristics (at T =25 unless otherwise noted) A Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V VGS = 0V, ID =250A 30 (BR) DS V Gate-Threshold Voltage VGS(th) VDS =V , ID =250A 1.0 3.0 GS Gate-Body Leakage I VDS =0V, VGS =20V 100 nA GSS 0.5 Zero Gate Voltage Drain Current I VDS =30V, VGS =0V A DSS VGS =10V, ID =3.5A 0.038 0.047 a Drain-Source On-Resistance RDS(on) VGS =4.5V, ID =2.8A 0.052 0.065 a Forward Transconductance gfs VDS =4.5V, ID =2.5A 7.0 S Diode Forward Voltage V I =1.25A,V =0V 0.8 1.2 V SD S GS Dynamic Gate Charge Q VDS =15V,VGS =5V,ID =2.5A 3.0 4.5 g Total Gate Charge Q 6 9 gt nC Gate-Source Charge Q VDS =15V,VGS =10V,ID =2.5A 1.6 gs Gate-Drain Charge Q 0.6 gd Gate Resistance R f =1.0MHz 2.5 5 7.5 g Input Capacitance C 305 iss Output Capacitance C VDS =15V,VGS =0V,f =1MHz 65 pF oss Reverse Transfer Capacitance C 29 rss Switching Turn-On Delay Time td(on) 7 11 V =15V, DD Rise Time tr 12 18 R =15, ID 1A, ns L Turn-Off Delay Time td(off) 14 25 V =10V,Rg=6 GEN Fall Time tf 6 10 Notes : a.Pulse Test : Pulse Width300s, duty cycle 2%. A,May,2012