Product Information

SVF7N60CF

SVF7N60CF electronic component of Silan

Datasheet
MOSFET N Channel 600V 7A(Tc) 4V @ 250uA 1.2O @ 3.5A,10V TO-220F RoHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5184 ea
Line Total: USD 0.52

372 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
259 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

SVF7N60CF
Silan

1 : USD 0.546
10 : USD 0.4452
50 : USD 0.4029
100 : USD 0.3486
500 : USD 0.3244
1000 : USD 0.3102

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SVF7N60CF is a MOSFET N Channel 600V 7A(Tc) 4V @ 250uA 1.2O @ 3.5A, 10V TO-220F RoHS manufactured by Silan. This device is a power MOSFET which uses a vertical structure to provide excellent drain current capability and a low temperature coefficient. It operates at 60V and 7A(Tc), offering 4V @ 250uA gate-source breakdown threshold, 1.2O @ 3.5A RDS(on) and 10V drain-source breakdown. It is packaged in industry-standard TO-220F RoHS package which is suitable for surface-mount and through-hole assembly as well as power distribution boards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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