CJ3434 Changjing Electronics Technology

CJ3434 electronic component of Changjing Electronics Technology
CJ3434 Changjing Electronics Technology
CJ3434 MOSFETs
CJ3434  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CJ3434 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ3434 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. CJ3434
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 30V 5A 1V @ 250uA 42 mΩ @ 5A,10V SOT-23 (SOT-23-3) RoHS
Datasheet: CJ3434 Datasheet (PDF)
Price (USD)
10: USD 0.1186 ea
Line Total: USD 1.19 
Availability : 970
  
Ship by Thu. 13 Nov to Wed. 19 Nov
QtyUnit Price
10$ 0.1186
100$ 0.0942
300$ 0.0615
3000$ 0.0491
6000$ 0.0442
9000$ 0.0417

Availability 970
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1186
100$ 0.0942
300$ 0.0615
3000$ 0.0491
6000$ 0.0442
9000$ 0.0417

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJ3434 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ3434 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3434 N-Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-23 m 42 10V 44 m 5A 30V 4.5V m 2.5V 50 FEATURE APPLICATION z TrenchFET Power MOSFET z Ideal for Load Swith and Battery z Low R DS(ON) Protection Applications z Typical ESD Protection Equivalent Circuit MARKING D G S ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 10 V GS Continuous Drain Current I 5 A D Pulsed Drain Current I * 20 A DM Thermal Resistance from Junction to Ambient R 417 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L *Repetitive rating Pluse width limited by junction temperature. www.cj-elec.com 1 A-2,Apr,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 30 V Zero gate voltage drain current IDSS VDS =30V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 10 A Gate threshold voltage(note 1) VGS(th) VDS =V , ID =250A 0.6 1 V GS VGS =10V, ID =5A 42 m Drain-source on-resistance (note 1) RDS(on) VGS =4.5V, ID =5A 44 m VGS =2.5V, ID =4A 50 m Forward tranconductance (note 1) gFS VDS =5V, ID =4A 15 S Diode forward voltage (note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note2) Input Capacitance C 245 pF iss Output Capacitance C VDS =15V,VGS =0V,f =1MHz 35 pF oss pF Reverse Transfer Capacitance C 20 rss SWITCHING PARAMETERS (note 2) Turn-on delay time td(on) 2 ns Turn-on rise time tr V =15V,V =10V 3.5 ns DD GS Turn-off delay time td(off) R =3.75,R =3 22 ns L GEN Turn-off fall time tf 3.5 ns nC Total Gate Charge Q 10 g Gate-Source Charge Q VDS =15V,VGS =10V,ID=4A 0.5 nC gs Gate-Drain Charge Q 1 nC gd Notes : 1. Pulse Test : Pulse width 300s, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 A-2,Apr,2015

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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