Product Information

1N5822

1N5822 electronic component of STMicroelectronics

Datasheet
Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax:0.475V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 0.1091 ea
Line Total: USD 65.46

5238 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 600  Multiples: 600
Pack Size: 600
Availability Price Quantity
6 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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1N5822
STMicroelectronics

1 : USD 0.1624

38994 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 600
Multiples : 600

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1N5822
STMicroelectronics

600 : USD 0.1673

2454 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 5
Multiples : 5

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1N5822
STMicroelectronics

5 : USD 0.2473
50 : USD 0.2
150 : USD 0.1795
600 : USD 0.1354
2400 : USD 0.124
4800 : USD 0.1173

5562 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 5

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1N5822
STMicroelectronics

5 : USD 0.2288
25 : USD 0.1729
100 : USD 0.1508
125 : USD 0.1313
335 : USD 0.1235

33756 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 600
Multiples : 600

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1N5822
STMicroelectronics

600 : USD 0.123
1200 : USD 0.105
2400 : USD 0.1029

5238 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 600
Multiples : 600

Stock Image

1N5822
STMicroelectronics

600 : USD 0.1091
1200 : USD 0.093
2400 : USD 0.0911

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Semiconductor Structure
Type Of Diode
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
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1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I 3A F(AV) V 40 V RRM T 150C j V (max) 0.475 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Value Symbol Parameter Unit 1N5820 1N5821 1N5822 20 30 40 V V RRM Repetitive peak reverse voltage I 10 A F(RMS) RMS forward current I 3A F(AV) Average forward current T = 100C = 0.5 L 33 A T = 110C = 0.5 L I 80 A FSM Surge non repetitive forward tp=10ms current Sinusoidal P 1700 W ARM Repetitive peak avalanche tp = 1s Tj = 25C power T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/51N582x THERMAL RESISTANCES Symbol Parameter Value Unit R Lead length = 10 mm 80 C/W th (j-a) Junction to ambient R Lead length = 10 mm 25 C/W th (j-l) Junction to lead STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit I * 222 mA R Reverse leakage Tj=25CV =V R RRM current 20 20 20 mA Tj = 100C V * 0.475 0.5 0.525 V F Forward voltage drop Tj = 25CI =3A F 0.85 0.9 0.95 V Tj=25CI = 9.4 A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equations : 2 P=0.33xI + 0.035 I for 1N5820 / 1N5821 F(AV) F (RMS ) 2 P=0.33xI + 0.060 I for 1N5822 F(AV) F (RMS ) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward power dissipation versus average forward current (1N5820/1N5821). average forward current (1N5822). PF(av)(W) PF(av)(W) 1.8 2.0 = 0.1 = 0.2 = 0.2 = 0.5 = 0.1 = 0.5 1.8 1.6 = 0.05 1.6 = 0.05 1.4 = 1 1.4 1.2 = 1 1.2 1.0 1.0 0.8 0.8 0.6 0.6 T T 0.4 0.4 0.2 0.2 =tp/T tp =tp/T tp IF(av) (A) IF(av) (A) 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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