Product Information

2N2907A

2N2907A electronic component of STMicroelectronics

Datasheet
Bipolar Transistors - BJT PNP General Purpose
Manufacturer: STMicroelectronics
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Price (USD)

5: USD 4.8697 ea
Line Total: USD 24.35

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5

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Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5
Multiples : 5

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2N2907A
STMicroelectronics

5 : USD 4.8697

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) -60 V CBO E V Collector-Emitter Voltage (I = 0) -60 V CEO B V Emitter-Base Voltage (I = 0) -5 V EBO C IC Collector Current -0.6 A I Collector Peak Current (t < 5 ms) -0.8 A CM p o P Total Dissipation at T 25 C tot amb 0.6 W for 2N2905A for 2N2907A 0.4 W o at T 25 C C 3 W for 2N2905A 1.8 W for 2N2907A o T Storage Temperature -65 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/7 February 2003 Obsolete Product(s) - Obsolete Product(s)2N2905A/2N2907A THERMAL DATA TO-39 TO-18 o Rthj-case Thermal Resistance Junction-Case Max 50 83.3 C/W o R Thermal Resistance Junction-Ambient Max 250 375 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = -50 V -10 nA CBO CB o Current (I = 0) V = -50 V T = 150 C -10 A E CB j I Collector Cut-off V = -30 V -50 nA CEX CE Current (V = 0.5V) BE I Base Cut-off Current V = -30 V -50 nA BEX CE (V = 0.5V) BE V Collector-Base -60 V (BR)CBO I = -10 A C Breakdown Voltage (I = 0) E V * Collector-Emitter I = -10 mA -60 V (BR)CEO C Breakdown Voltage (I = 0) B V Emitter-Base -5 V (BR)EBO IE = -10 A Breakdown Voltage (I = 0) C V * Collector-Emitter I = -150 mA I = -15 mA -0.4 V CE(sat) C B Saturation Voltage I = -500 mA I = -50 mA -1.6 V C B V * Base-Emitter I = -150 mA I = -15 mA -1.3 V BE(sat) C B Saturation Voltage I = -500 mA I = -50 mA -2.6 V C B h * DC Current Gain I = -0.1 mA V = -10 V 75 FE C CE I = -1 mA V = -10 V 100 C CE I = -10 mA V = -10 V 100 C CE I = -150 mA V = -10 V 100 300 C CE I = -500 mA V = -10 V 50 C CE f Transition Frequency V = -20 V f = 100 MHz 200 MHz T CE I = -50 mA C C Emitter-Base I = 0 V = -2 V f = 1MHz 30 pF EBO C EB Capacitance CCBO Collector-Base IE = 0 VCB = -10 V f = 1MHz 8 pF Capacitance t ** Delay Time V = -30 V I = -150 mA 10 ns d CC C I = -15 mA B1 t ** Rise Time V = -30 V I = -150 mA 40 ns r CC C I = -15 mA B1 ts** Storage Time VCC = -6 V IC = -150 mA 80 ns I = -I = -15 mA B1 B2 t ** Fall Time V = -6 V I = -150 mA 30 ns f CC C I = -I = -15 mA B1 B2 t ** Turn-on Time V = -30 V I = -150 mA 45 ns on CC C I = -15 mA B1 t ** Turn-off Time V = -6 V I = -150 mA 100 ns off CC C I = -I = -15 mA B1 B2 * Pulsed: Pulse duration = 300 s, duty cycle 1 % ** See test circuit 2/7 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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