Product Information

2STR1160

2STR1160 electronic component of STMicroelectronics

Datasheet
Transistors Bipolar - BJT Low-Volt Fast Switch NPN Pwr Tran
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1136 ea
Line Total: USD 340.8

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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2STR1160
STMicroelectronics

3000 : USD 0.1468

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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2STR1160
STMicroelectronics

1 : USD 0.5532
10 : USD 0.4471
100 : USD 0.3047
500 : USD 0.2286
1000 : USD 0.1714

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 1

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2STR1160
STMicroelectronics


0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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2STR1160
STMicroelectronics

3000 : USD 0.1136
9000 : USD 0.1051
12000 : USD 0.1051
30000 : USD 0.1051
45000 : USD 0.1051

0 - WHS 5


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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2STR1160
STMicroelectronics

1 : USD 1.2555
10 : USD 0.951
100 : USD 0.2372
500 : USD 0.1624

0 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 110
Multiples : 1

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2STR1160
STMicroelectronics

110 : USD 0.1734
200 : USD 0.1521
500 : USD 0.1309
1000 : USD 0.1241
2000 : USD 0.114

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

2STR1160 Low voltage fast-switching NPN power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits Description The device in a NPN transistor manufactured using new PB-HCD (Power Bipolar High Current Density) technology. The resulting SOT-23 transistor shows exceptional high gain performances coupled with very low saturation Figure 1: Internal schematic diagram voltage. The complementary PNP is the 2STR2160. Applications LED Battery charger Motor and relay driver Voltage regulation Table 1: Device summary Order code Marking Package Packing 2STR1160 1160 SOT-23 Tape and reel April 2015 DocID14430 Rev 3 1/9 www.st.com This is information on a product in full production. Electrical ratings 2STR1160 1 Electrical ratings Table 2: Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 60 V V Collector-emitter voltage (I = 0) 60 V CEO B VEBO Emitter-base voltage (IC = 0) 5 V I Collector current 1 A C ICM Collector peak current (tP < 5ms) 2 A P Total dissipation at T = 25C 0.5 W tot amb Tstg Storage temperature -65 to 150 C Max. operating junction temperature 150 C TJ Table 3: Thermal data Symbol Parameter Value Unit C/ (1) Rthj-amb Thermal resistance junction-amb max 250 W Notes: (1) 2 Device mounted on PCB area of 1 cm 2/9 DocID14430 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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