BCP53-16 STMicroelectronics

BCP53-16 LOW POWER PNP TRANSISTOR Ordering Code Marking BCP53-16 BCP5316 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE NPN COMPLEMENTARY TYPE IS 2 BCP56-16 1 APPLICATIONS SOT-223 MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS AUTOMOTIVE POST-VOLTAGE REGULATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -100 V V Collector-Emitter Voltage (I = 0) -80 V CEO B V Collector-Emitter Voltage (R = 1K) -100 V CER BE V Emitter-Base Voltage (I = 0) -5 V EBO C I Collector Current -1 A C I Collector Peak Current (t < 5 ms) -1.5 A CM p I Base Current -0.1 A B I Base Peak Current (t < ms) -0.2 A BM p o P Total Dissipation at T = 25 C 1.6 W tot amb o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/4 September 2003 BCP53-16 THERMAL DATA o R Thermal Resistance Junction-Ambient Max 78 C/W thj-amb 2 Device mounted on a PCB area of 1 cm o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = -30 V -100 nA CBO CB o Current (I = 0) V = -30 V T = 125 C -10 A E CB j V Collector-Base I = -100 A -100 V (BR)CBO C Breakdown Voltage (I = 0) E V * Collector-Emitter I = -20 mA -80 V (BR)CEO C Breakdown Voltage (I = 0) B V Collector-Emitter -100 V (BR)CER I = -100 A C Breakdown Voltage (R = 1 K) BE V Emitter-Base I = -10 A -5 V (BR)EBO E Breakdown Voltage (I = 0) C V * Collector-Emitter I = -500 mA I = -50 mA -0.5 V CE(sat) C B Saturation Voltage VBE(on)* Base-Emitter On IC = -500 mA VCE = -2 V -1 V Voltage h * DC Current Gain I = -5 mA V = -2 V 40 FE C CE I = -150 mA V = -2 V 100 250 C CE I = -500 mA V = -2 V 25 C CE f Transition Frequency I = -10 mA V = -5 V f = 20 MHz 50 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4