BD241C STMicroelectronics

BD241A BD241C NPN power transistors . Features NPN transistors Applications Audio, general purpose switching and amplifier transistors 3 2 1 Description TO-220 The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagram performance coupled with very low saturation voltage. The PNP types are BD242A and BD242C. Table 1. Device summary Order codes Marking Package Packaging BD241A BD241A TO-220 Tube BD241C BD241C TO-220 Tube July 2007 Rev 2 1/9 www.st.com 9Absolute maximum ratings BD241A BD241C 1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit BD241A BD241C V Collector-emitter voltage (R = 100) 70115V CER BE V Collector-emitter voltage (I = 0) 60 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 3 A C I Collector peak current (t < ms) 5 A CM p I Base current 1 A B P Total dissipation at T = 25C 40 W TOT case T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J 2/9