BD911 STMicroelectronics

BD911 electronic component of STMicroelectronics
BD911 STMicroelectronics
BD911 Bipolar Transistors - BJT
BD911  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BD911 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BD911 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BD911
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO220AB
Datasheet: BD911 Datasheet (PDF)
Price (USD)
369: USD 0.7058 ea
Line Total: USD 260.44 
Availability : 19123
  
Ship by Mon. 11 Aug to Fri. 15 Aug
QtyUnit Price
369$ 0.7058
399$ 0.6525
500$ 0.5486
1000$ 0.4331
2000$ 0.3526

Availability 40
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 11
Multiples : 1
QtyUnit Price
11$ 6.84
14$ 4.698
35$ 1.9035
129$ 1.0237
750$ 0.5012


Availability 2740
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.792
10$ 1.0346
31$ 0.609
85$ 0.5768
1000$ 0.5698


Availability 19123
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 369
Multiples : 1
QtyUnit Price
369$ 0.7058
399$ 0.6525
500$ 0.5486
1000$ 0.4331
2000$ 0.3526


Availability 7760
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.5141
2000$ 0.4776
5000$ 0.4371
10000$ 0.4133

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Alternate Case Style
Application Code
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Gain Hfe Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Device Marking
Gain Bandwidth Ft Typ
Hfe Min
Hfe Typ
No. Of Transistors
Termination Type
Kind Of Package
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BD911 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD911 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 Collector-Base Voltage (I = 0) 80 100 V V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I ,I Collector Current 15 A E C I Base Current 5 A B o P 90 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/6 October 1999BD909 / BD910 / BD911 / BD912 THERMAL DATA o R Thermal Resistance Junction-case Max 1.4 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD909/910 V = 80 V 500 A CBO CB Current (I = 0) for BD911/912 V = 100 V 500 A E CB o T = 150 C case BD909/910 for V = 80 V 5 mA CB for BD911/912 V = 100 V 5 mA CB I Collector Cut-off for BD909/910 V = 40 V 1 mA CEO CE Current (I = 0) for BD911/912 V = 50 V 1 mA B CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA for BD909/910 80 V CEO(sus) C Sustaining Voltage for BD911/912 100 V (I = 0) B V * Collector-Emitter I = 5 A I = 0.5 A 1 V CE(sat) C B Saturation Voltage I = 10 A I = 2.5 A 3 V C B V * Base-Emitter I = 10 A I = 2.5 A 2.5 V BE(sat) C B Saturation Voltage V * Base-Emitter Voltage I = 5 A V = 4 V 1.5 V BE C CE h * DC Current Gain I = 0.5 A V = 4 V 40 250 FE C CE I = 5 A V = 4 V 15 150 C CE I = 10 A V = 4 V 5 C CE f Transition frequency I = 0.5 A V = 4 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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