BD912 STMicroelectronics

BD912 electronic component of STMicroelectronics
BD912 STMicroelectronics
BD912 Bipolar Transistors - BJT
BD912  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BD912 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BD912 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BD912
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 100 V 15 A 3MHz 90 W Through Hole TO-220
Datasheet: BD912 Datasheet (PDF)
Price (USD)
1: USD 2.87 ea
Line Total: USD 2.87 
Availability : 3017
  
Ship by Mon. 11 Aug to Wed. 13 Aug
QtyUnit Price
1$ 2.87
10$ 2.3422
25$ 1.883
31$ 0.6202
84$ 0.5866

Availability 158
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 13
Multiples : 1
QtyUnit Price
13$ 5.73
100$ 1.35
150$ 1.1237
250$ 1.0862
500$ 0.9875
1000$ 0.775
2500$ 0.6875
10000$ 0.6625


Availability 4850
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.7166
10000$ 0.7089


Availability 57124
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 185
Multiples : 1
QtyUnit Price
185$ 1.4055
250$ 1.0439
278$ 0.9356
500$ 0.8038
1000$ 0.7123
2000$ 0.7026
5000$ 0.6204


Availability 3017
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.87
10$ 2.3422
25$ 1.883
31$ 0.6202
84$ 0.5866


Availability 4850
Ship by Wed. 13 Aug to Tue. 19 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.7166
10000$ 0.7089

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Frequency
Power Dissipation
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We are delighted to provide the BD912 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD912 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 Collector-Base Voltage (I = 0) 80 100 V V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I ,I Collector Current 15 A E C I Base Current 5 A B o P 90 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/6 October 1999BD909 / BD910 / BD911 / BD912 THERMAL DATA o R Thermal Resistance Junction-case Max 1.4 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD909/910 V = 80 V 500 A CBO CB Current (I = 0) for BD911/912 V = 100 V 500 A E CB o T = 150 C case BD909/910 for V = 80 V 5 mA CB for BD911/912 V = 100 V 5 mA CB I Collector Cut-off for BD909/910 V = 40 V 1 mA CEO CE Current (I = 0) for BD911/912 V = 50 V 1 mA B CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA for BD909/910 80 V CEO(sus) C Sustaining Voltage for BD911/912 100 V (I = 0) B V * Collector-Emitter I = 5 A I = 0.5 A 1 V CE(sat) C B Saturation Voltage I = 10 A I = 2.5 A 3 V C B V * Base-Emitter I = 10 A I = 2.5 A 2.5 V BE(sat) C B Saturation Voltage V * Base-Emitter Voltage I = 5 A V = 4 V 1.5 V BE C CE h * DC Current Gain I = 0.5 A V = 4 V 40 250 FE C CE I = 5 A V = 4 V 15 150 C CE I = 10 A V = 4 V 5 C CE f Transition frequency I = 0.5 A V = 4 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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