Product Information

BTA41-600B

BTA41-600B electronic component of STMicroelectronics

Datasheet
BTA41-600B TOP3 TRIAC 40A I60 TO-218 T/HO

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.4736 ea
Line Total: USD 7.47

0 - Global Stock
Ships to you by
Mon. 22 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you by Mon. 22 Apr

MOQ : 1
Multiples : 1

Stock Image

BTA41-600B
STMicroelectronics

1 : USD 7.4736
25 : USD 3.7368
50 : USD 3.3631
75 : USD 2.8026
100 : USD 2.5223

     
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
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BTA40, BTA41, BTB41 40 A standard TRIACs Features A2 High current TRIAC Low thermal resistance with clip bonding G High commutation capability A1 BTA series UL1557 certified (File ref: 81734) A1 Packages are RoHS (2002/95/EC) compliant G A2 Applications On/off function in static relays, heating RD91 insulated regulation, induction motor starting circuits (BTA40) Phase control operations in light dimmers, motor speed controllers, and similar A2 Description A1 A1 A2 G A2 Available in high power packages, the G BTA/BTB40-41 series is suitable for general TOP3 insulated TOP3 purpose AC switching. (BTA41) (BTB41) The BTA series provides an insulated tab (rated at 2500 V rms). Table 1. Device summary (1) (1) Symbol Parameter BTA40 BTA41 BTB41 Unit I On-state rms current 40 41 41 A T(RMS) V /V Repetitive peak off-state voltage 600 and 800 600 and 800 600 and 800 V DRM RRM I Triggering gate current 50 50 50 mA GT 1. Insulated package August 2009 Doc ID 7469 Rev 8 1/9 www.st.com 9Characteristics BTA40, BTA41, BTB41 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit TOP3 T = 95 C c On-state rms current I 40 A T(RMS) (full sine wave) RD91 / TOP ins. T = 80 C c F = 50 Hz t = 20 ms 400 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 420 ItI t Value for fusing t = 10 ms 1000 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r Non repetitive surge peak off-state V /V + DSM RSM V /V t = 10 ms T = 25 C V DSM RSM p j voltage 100 I Peak gate current t = 20 s T = 125 C 8 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit I - II - III 50 (1) I MAX. mA GT IV 100 V = 12 V R = 33 D L V ALL MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C ALL MIN. 0.2 V GD D DRM L j I (2) I = 500 mA MAX. 80 mA H T I - III - IV 70 I I = 1.2 I MAX. mA L G GT II 160 (2) dV/dt V = 67% V gate open T = 125 C MIN. 500 V/s D DRM j (2) (dV/dt)c (dI/dt)c = 20 A/ms T = 125 C MIN. 10 V/s j 1. Minimum I is guaranted at 5% of I max. GT GT 2. for both polarities of A2 referenced to A1 2/9 Doc ID 7469 Rev 8

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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