X-On Electronics has gained recognition as a prominent supplier of BUL38D Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUL38D Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUL38D STMicroelectronics

BUL38D electronic component of STMicroelectronics
BUL38D STMicroelectronics
BUL38D Bipolar Transistors - BJT
BUL38D  Semiconductors

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See Product Specifications
Part No. BUL38D
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: transistors (npn/pnp) npn 5a 450v to-220 (to-220-3) rohs
Datasheet: BUL38D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8486 ea
Line Total: USD 1.85 
Availability - 48
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ : 1
Multiples : 1
1 : USD 1.8486
10 : USD 1.5176
50 : USD 0.9126
100 : USD 0.8029
500 : USD 0.7358
1000 : USD 0.7023
2000 : USD 0.6948

161
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 2.282
10 : USD 1.3846
23 : USD 0.8232
63 : USD 0.7784
5000 : USD 0.7574

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Hfe Min
Power Dissipation Ptot Max
Termination Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUL38D from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUL38D and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BUL38D High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness 3 2 Fully characterized at 125 C 1 Integrated antiparallel collector-emitter diode TO-220 Applications Electronic transformers for halogen lamps Switch mode power supplies Figure 1. Internal schematic diagram Description The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Table 1. Device summary (1) Order code Marking Package Packaging BUL38D A BUL38D or TO-220 Tube BUL38D B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. June 2009 Doc ID 7176 Rev 3 1/10 www.st.com 10 Electrical ratings BUL38D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 800 V CES BE V Collector-emitter voltage (I = 0) 450 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 10 A CM P I Base current 2 A B I Base peak current (t < 5 ms) 4 A BM P P Total dissipation at T 25 C 80 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.56 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/10 Doc ID 7176 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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