BUL38D STMicroelectronics

BUL38D High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness 3 2 Fully characterized at 125 C 1 Integrated antiparallel collector-emitter diode TO-220 Applications Electronic transformers for halogen lamps Switch mode power supplies Figure 1. Internal schematic diagram Description The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Table 1. Device summary (1) Order code Marking Package Packaging BUL38D A BUL38D or TO-220 Tube BUL38D B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. June 2009 Doc ID 7176 Rev 3 1/10 www.st.com 10 Electrical ratings BUL38D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 800 V CES BE V Collector-emitter voltage (I = 0) 450 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 10 A CM P I Base current 2 A B I Base peak current (t < 5 ms) 4 A BM P P Total dissipation at T 25 C 80 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.56 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/10 Doc ID 7176 Rev 3