BUL743 STMicroelectronics

BUL743 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Applications Electronic ballast for fluorescent lighting up to TO-220 256 W (8 x 32 W) Switch mode power supplies Figure 1. Internal schematic diagram Description The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Table 1. Device summary Order code Marking Package Packaging BUL743 BUL743 TO-220 Tube May 2009 Doc ID 15263 Rev 3 1/10 www.st.com 10 Electrical ratings BUL743 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1200 V CES BE V Collector-emitter voltage (I = 0) 500 V CEO B V V Emitter-base voltage (I = 0, I = 6 A, t < 10 ms) V EBO C B p (BR)EBO I Collector current 12 A C I Collector peak current (t < 5 ms) 24 A CM P I Base current 6 A B I Base peak current (t < 5 ms) 12 A BM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction - case 1.25 C/W thj-case R Thermal resistance junction - ambient 62.5 C/W thj-amb 2/10 Doc ID 15263 Rev 3