X-On Electronics has gained recognition as a prominent supplier of BUL743 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUL743 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUL743 STMicroelectronics

BUL743 electronic component of STMicroelectronics
BUL743 STMicroelectronics
BUL743 Bipolar Transistors - BJT
BUL743  Semiconductors

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See Product Specifications
Part No. BUL743
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT H VL fast-switching
Datasheet: BUL743 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.459 ea
Line Total: USD 2459 
Availability - 7760
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
7760
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 2.459
2000 : USD 2.444
3000 : USD 2.4288
4000 : USD 2.4135
5000 : USD 2.398
10000 : USD 2.3825

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUL743 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUL743 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BUL743 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Applications Electronic ballast for fluorescent lighting up to TO-220 256 W (8 x 32 W) Switch mode power supplies Figure 1. Internal schematic diagram Description The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Table 1. Device summary Order code Marking Package Packaging BUL743 BUL743 TO-220 Tube May 2009 Doc ID 15263 Rev 3 1/10 www.st.com 10 Electrical ratings BUL743 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1200 V CES BE V Collector-emitter voltage (I = 0) 500 V CEO B V V Emitter-base voltage (I = 0, I = 6 A, t < 10 ms) V EBO C B p (BR)EBO I Collector current 12 A C I Collector peak current (t < 5 ms) 24 A CM P I Base current 6 A B I Base peak current (t < 5 ms) 12 A BM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction - case 1.25 C/W thj-case R Thermal resistance junction - ambient 62.5 C/W thj-amb 2/10 Doc ID 15263 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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