Product Information

ESDZV201-1BF4

ESDZV201-1BF4 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes DFD PROTECTION & FILTER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

45000: USD 0.0195 ea
Line Total: USD 877.5

0 - Global Stock
MOQ: 45000  Multiples: 45000
Pack Size: 45000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 30000
Multiples : 30000

Stock Image

ESDZV201-1BF4
STMicroelectronics

30000 : USD 0.0419
60000 : USD 0.0379
150000 : USD 0.0368

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 45000
Multiples : 45000

Stock Image

ESDZV201-1BF4
STMicroelectronics

45000 : USD 0.0195
90000 : USD 0.0185

     
Manufacturer
Product Category
Series
Package / Case
Packaging
Part Status
Type
Voltage - Reverse Standoff Typ
Voltage - Breakdown Min
Voltage - Clamping Max Ipp
Current - Peak Pulse 10/1000 S
Power - Peak Pulse
Power Line Protection
Applications
Capacitance Frequency
Operating Temperature
Mounting Type
Supplier Device Package
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ESDZV201-1BF4 Datasheet 20 V low clamping, low capacitance single line bidirectional ESD protection Features Low clamping voltage: 31 V at 16 A I TLP PP Bidirectional device Stand-off voltage: 20 V 2 0201 thin package PCB area: 0.18 mm Complies with the following standards: IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) 0201 package ECOPACK2 compliant component Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablet and notebooks Portable multimedia devices and accessories Wearable, home automation, healthcare Highly integrated systems Description Product status link The ESDZV201-1BF4 is a bidirectional single line TVS diode designed to protect the ESDZV201-1BF4 data line or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. DS13171 - Rev 1 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.ESDZV201-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V pp Peak pulse voltage kV IEC 61000-4-2 air discharge 15 P Peak pulse power (8/20 s) 140 W pp I Peak pulse current (8/20 s) 4.5 A pp T Operating junction temperature range -55 to +150 j T Storage junction temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics (definitions) I Parameter Symbol R D V = Trigger voltage Trig V Clamping voltage CL = V RM V V I Leakage current V Trig V V = CL H RM RM I V RM = Stand-off voltage RM = Peak pulse current I PP R Dynamic resistance = D V = Holding voltage H I PP C Input capacitance per line = LINE Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V Higher voltage than V guarantees the protection turn-on 23 30 V trig TRIG V Lower voltage than V guarantees the protection turn-off 20 V H H I Leakage current V = 20 V 0.3 A RM RM I R V = 18 V 100 nA IEC 61000-4-2, 8 kV V Clamping voltage 30 V CL contact discharge measured after 30 ns V 8/20 s waveform, I = 1 A 22 10 V CL PP V 8/20 s waveform, I = 4.5 A 29 31 V CL PP R Dynamic resistance, pulse duration 100 ns - I 1 A 16 A 0.7 D PP C V = 0 V, F = 1 MHz, V = 30 mV LINE Line capacitance LINE OSC 3 5 pF DS13171 - Rev 1 page 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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ST MICROELECTRONICS
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