Product Information

EVALSTDRIVE601

EVALSTDRIVE601 electronic component of STMicroelectronics

Datasheet
Power Management IC Development Tools INDUSTRIAL & POWER CONVERSION

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 72.1402 ea
Line Total: USD 72.14

16 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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EVALSTDRIVE601
STMicroelectronics

1 : USD 75.0259

     
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RoHS - XON
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Type
Tool Is For Evaluation Of
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Output Voltage
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EVALSTDRIVE601 Data brief Demonstration board for STDRIVE601 triple gate driver Features High voltage rail up to 600V Driver supply input voltage range 9V-20V STGD6M65DF2 IGBTs power stage featuring: V = 650 V (BR)CES V = 1.55 V I = 6 A CE(sat) C Dual footprint for IGBT/MOSFET package: DPAK PowerFlat 8x8 Selectable single or 3-shunt current sensing topology: Sensored or sensorless BEMF detection FOC or 6-Step algorithm SmartShutdown overcurrent protection Hall effect sensors connector Bus voltage sensing 450V bulk capacitor Connector for interfacing with MCU RoHS compliant Application Product status link EVALSTDRIVE601 Three-phase motor drives Fans Pumps Refrigerator compressors Industrial inverters Appliances Description The EVALSTDRIVE601 demonstration board is a complete 3-phase inverter which allows evaluating all of the STDRIVE601 features. The power stage features STGD6M65DF2 IGBTs, but can be populated with any IGBT or power MOSFET in DPAK or powerFLAT 8x8 HV package. The board is designed to support a three shunt or a single shunt current sensing topology. A strip connector allows an easy interfacing with MCU control. The STDRIVE601 is a 600V gate driver device manufactured with BCD6s offline technology. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs or IGBTs suitable for 3-phase applications.The device integrates three bootstrap diodes and a smart shutdown feature able to detect very fast overcurrent condition, minimizing the propagation delay between the overcurrent event and the output switch-off. DB3896 - Rev 1 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.EVALSTDRIVE601 Schematic diagram 1 Schematic diagram Figure 1. EVALSTDRIVE601 schematic Driver output stages DB3896 - Rev 1 page 2/10 HV VCC VCC 2 R1 D1 TP1 Q1 10R R2 BAT54J GH1 1 BOOT1 27R D2 N.M. TP30 TP3 R4 3 C1 TP4 R3 100R 100k R5 SGND R6 PGND N.M. C2 C3 BOOT2 220nF/25V 220nF/25V OUT1 27R D3 N.M. 0R 2 R7 D5 TP5 Q2 R8 BOOT3 10R 1 BAT54J GL1 27R D4 N.M. 3 R10 R9 100R C4 TP6 100k N.M. SENSE1 VCC HV TP7 TP8 TP29 U1 STDRIVE601D C5 470nF/50V 1 28 BOOT1 2 VCC BOOT1 R11 D6 27 TP9 Q3 HVG1 2 26 HIN1 10R HIN1 OUT1 3 1 BAT54J GH2 HIN2 TP10 HIN2 4 16 TP11 HIN3 HIN3 LVG1 C6 470nF/50V R13 3 5 24 BOOT2 C7 TP12 LIN1 LIN1 BOOT2 R12 100R 100k 6 23 N.M. LIN2 VCC LIN2 HVG2 7 22 LIN3 OUT2 LIN3 OUT2 TP13 TP15 CIN 8 15 TP16 FAULT 2 R14 R15 D7 FAULT LVG2 CIN 9 TP14 TP17 Q4 47k C8 470nF/50V CIN OD 10 20 BOOT3 ENABLE 10R EN BOOT3 11 19 BAT54J GL2 1 OD HVG3 12 18 SGND OUT3 13 PGND R17 3 14 LVG3 R16 100R C9 TP18 100k C10 N.M. 47nF/25V SENSE2 HV 2 R19 D8 TP19 Q5 R62 0R VDD 10R BAT54J GH3 1 R20 1k R18 TSV912IQ2T 10k R23 3 U2B R22 1k TP20 5 R21 100R C12 100k R63 + CIN 7 N.M. JP2 JP3 6 R24 1k OUT3 C35 - N.M. C11 33pF/25V 2 R25 D9 1nF/25V OPEN OPEN TP21 Q6 R61 10k 10R BAT54J GL3 1 R60 R27 3 C13 TP22 4k7 R26 100R 100k TRIPLE SHUNT (default) N.M. Overcurrent 5.5A VDD=3V3 SENSE3 SENSE3 REF SENSE2 REF SENSE1 REF SENSE3 R58 220m/ 2W/ 1% SENSE2 R57 220m/ 2W/ 1% SENSE1 R30 220m/ 2W/ 1% STGD6M65DF2 STGD6M65DF2 STGD6M65DF2 STGD6M65DF2 STGD6M65DF2 STGD6M65DF2

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