HSP061-2N4 STMicroelectronics

HSP061-2 2-line ESD protection for high speed lines Datasheet - production data Benefits High ESD robustness of the equipment Suitable for high density boards Complies with following standards MIL-STD 883G Method 3015-7 Class 3B: 8 kV +63 1 IEC 61000-4-2 level 4: 4)1 / +63 0 15 kV (air discharge) 4)1 / 8 kV (contact discharge) Applications The HSP061-2 series is designed to protect against electrostatic discharge on sub micron Figure 1. Functional schematic (top view) technology circuits driving: HDMI 1.3 and 1.4 1 6 I/O1 I/O1 Digital Video Interface GND I/O2 I/O1 Display Port GND 2 5 V BU S USB 3.0 NC NC Serial ATA 4 I/O2 I/O2 3 QFN 4 leads Ethernet HMI QFN 6 leads Description Features The HSP061-2 is a 2-channel ESD array with a rail-to-rail architecture designed specifically for Flow-through routing to keep signal integrity the protection of high speed differential lines. Ultralarge bandwidth: 6 GHz The ultralow variation of the capacitance ensures Ultralow capacitance: 0.6 pF very low influence on signal-skew. The large Low leakage current: 100 nA at 25 C bandwidth makes it compatible with 5 Gbps. Extended operating junction temperature The HSP061-2M6 is packaged in QFN-6L (1.45 range: -40 C to 150 C x 1.0 mm) with a 500 m pitch. The HSP061-2N4 RoHS compliant is packaged in QFN-4L (1.0 x 0.8 mm) with a 400 m pitch. October 2015 DocID022777 Rev 3 1/12 This is information on a product in full production. www.st.comCharacteristics HSP061-2 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 I Repetitive peak pulse current (8/20 s) 3 A pp T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 100 nA RM RM IEC 61000-4-2, +8 kV contact V Clamping voltage 18 V CL (I = 30 A), measured at 30 ns PP Capacitance (input/output to V = 0 V, F = 200 to 3000 MHz, I/O C 0.6 0.85 pF I/O - GND ground) V = 30 mV OSC Capacitance variation V = 0 V F = 200 to 3000 MHz, I/O C 0.03 0.13 pF I/O - GND (input/output to ground) V = 30 mV OSC HSP061-2M6 5.5 f Cut-off frequency -3 dB GHz C HSP061-2N4 6 2/12 DocID022777 Rev 3