HSP061-4M10Y STMicroelectronics

HSP061-4M10Y Automotive 4-line ESD protection for high speed lines Datasheet - production data ISO 7637-3: pulse 3a: -150 V pulse 3b: +100 V Applications The HSP061-4M10Y is designed to protect QFN-10L package against electrostatic discharge on sub micron technology circuits driving: Automotive communication buses Features HDMI 1.3 and 1.4 Flow-through routing to keep signal integrity LVDS Ultralarge bandwidth: 8.7 GHz APIX Ultralow capacitance: 0.3 pF Digital Video Interface Low leakage current: 70 nA at 25 C USB 3.0 Extended operating junction temperature range: -40 C to 150 C Description Thin package: 0.5 mm max. The HSP061-4M10Y is a 4-channel ESD array RoHS compliant with a rail to rail architecture designed specifically AEC-Q101 qualified for the protection of high speed differential lines. The ultralow variation of the capacitance ensures Benefits very low influence on signal-skew. The large High ESD robustness of the equipment bandwidth makes the device compatible with Suitable for high density boards 3.4 Gbps. The device is packaged in QFN-10L 2.5 x 1 mm Complies with following standards with a 500 m pitch, which minimizes the PCB MIL-STD 883G Method 3015-7 Class 3B: area. 8 kV IEC 61000-4-2 level 4: 8 kV (contact discharge) 15 kV (air discharge) ISO 10605: C = 150 pF, R = 330 : 8 kV (contact discharge) 15 kV (air discharge) ISO 10605: C = 330 pF, R = 330 : 8 kV (contact discharge) 15 kV (air discharge) December 2013 DocID025560 Rev 1 1/11 This is information on a product in full production. www.st.comCharacteristics HSP061-4M10Y 1 Characteristics Figure 1. Functional schematic (top view) Internally I/O 1 1 10 not connected I/O 2 2 9 GND 3 8 GND I/O 3 4 7 Internally I/O 4 5 6 not connected Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit ISO 10605: C = 150 pF, R = 330 8 contact discharge air discharge 15 V Peak pulse voltage kV PP ISO 10605: C = 330 pF, R = 330 contact discharge 8 air discharge 15 T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 70 nA RM RM V Clamping voltage IPP = 1 A, 8/20 s 15 V CL Capacitance C V = 0 V, F = 1 MHz, V = 30 mV 0.3 0.4 pF I/O - I/O I/O OSC (I/O to I/O) Capacitance C V = 0 V F = 1 MHz, V = 30 mV 0.6 0.8 pF I/O - GND I/O OSC (I/O to GND) f Cut-off frequency -3dB 8.7 GHz C Differential (1) Z t = 200 ps (10 - 90%) , Z = 100 85 100 115 Diff r 0 Diff impedance 1. HDMI specification conditions. This information can be provided for other applications. Please contact your local ST office. 2/11 DocID025560 Rev 1