X-On Electronics has gained recognition as a prominent supplier of MJD45H11T4 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD45H11T4 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD45H11T4 STMicroelectronics

MJD45H11T4 electronic component of STMicroelectronics
MJD45H11T4 STMicroelectronics
MJD45H11T4 Bipolar Transistors - BJT
MJD45H11T4  Semiconductors

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See Product Specifications
Part No. MJD45H11T4
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP Gen Pur Switch
Datasheet: MJD45H11T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3558 ea
Line Total: USD 889.5 
Availability - 80025
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
1823
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 515
Multiples : 1
515 : USD 0.5056
523 : USD 0.4978
531 : USD 0.49
540 : USD 0.4821
549 : USD 0.4744
558 : USD 0.4666
1000 : USD 0.4411

80025
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.3558
5000 : USD 0.3454
7500 : USD 0.3424
10000 : USD 0.333
12500 : USD 0.3296
17500 : USD 0.3264

8
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.924
37 : USD 0.511
101 : USD 0.483
1000 : USD 0.4816
2500 : USD 0.4634

80025
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.3558
5000 : USD 0.3454
7500 : USD 0.3424
10000 : USD 0.333
12500 : USD 0.3296
17500 : USD 0.3264

14550
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.3573
5000 : USD 0.3474
7500 : USD 0.3446
10000 : USD 0.3356
12500 : USD 0.3323
17500 : USD 0.329

1823
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 523
Multiples : 1
523 : USD 0.4978
531 : USD 0.49
540 : USD 0.4821
549 : USD 0.4744
558 : USD 0.4666
1000 : USD 0.4411

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the MJD45H11T4 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD45H11T4 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD45H11T4 is a high voltage NPN Darlington transistor manufactured by STMicroelectronics. It is designed for use in general-purpose switching and amplification applications. The transistor has a collector-emitter voltage rating of 600V and a collector-base voltage rating of 70V. It has a current gain range of 500-3000 and a power dissipation rating of 8 watts. The device has a maximum collector current rating of 4A and a maximum DC current gain of 4000. It is available in a TO-220 package and features a recommended operating junction temperature range of -55°C to 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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