MJD47T4

MJD47 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIXT4 ) ELECTRICALLY SIMILAR TO TIP47 3 APPLICATIONS 1 SWITCH MODE POWER SUPPLIES AUDIO AMPLIFIERS DPAK GENERAL PURPOSE SWITCHING AND TO-252 AMPLIFIER (SuffixT4 ) DESCRIPTION The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 350 V CBO E V Collector-Emitter Voltage (I = 0) 250 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 1 A C I Collector Peak Current (t < 5 ms) 2 A CM p I Base Current 0.6 A B I Base Peak Current (t < 5 ms) 1.2 A BM p o P Total Dissipation at T = 25 C15 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 January 2000 MJD47 THERMAL DATA o R Thermal Resistance Junction-case Max 8.33 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 350 V 0.1 mA CES CE Current (V = 0) BE I Collector Cut-off V = 150 V 0.1 mA CEO CE Current (I = 0) B I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA 250 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 1 A I = 0.2 A 1 V CE(sat) C B Saturation Voltage V * Base-Emitter On I = 1 A V = 10 V 1.5 V BE(on) C CE Voltage h * DC Current Gain I = 0.3 A V = 10 V 30 150 FE C CE I = 1 A V = 10 V 10 C CE f Transition Frequency I = 0.2 A V = 10 V f = 2MHz 10 MHz T C CE h Small Signal Current I = 0.2 A V = 10 V f = 1KHz 25 fe C CE Gain * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curves 2/6