Product Information

MJE340

MJE340 electronic component of STMicroelectronics

Datasheet
MJE340 NPNTRA 300V 0.5A 5** T/HOLE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5956 ea
Line Total: USD 2.6

58 - Global Stock
Ships to you by
Tue. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
58 - Warehouse 1


Ships to you by Tue. 30 Apr

MOQ : 1
Multiples : 1

Stock Image

MJE340
STMicroelectronics

1 : USD 2.5956
10 : USD 1.2978
50 : USD 1.168
250 : USD 0.9733
500 : USD 0.876

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Additional Infomation About Product

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. Figure 1. Internal schematic diagram 3 % Table 1. Device summary Order code Marking Polarity Package Packaging MJE340 MJE340 NPN SOT-32 Tube MJE350 MJE350 PNP SOT-32 Tube November 2011 Doc ID 4171 Rev 6 1/8 www.st.com 8Electrical ratings MJE340, MJE350 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter MJE340 (NPN) Unit MJE350 (PNP) V Collector-base voltage (I = 0) 300 V CBO E V Collector-emitter voltage (I = 0) 300 V CEO B V Base-emitter voltage (I = 0) 3 V EBO C I Collector current 0.5 A C P Total dissipation at T 25 C 20.8 W TOT c T Storage temperature -65 to 150 stg C T Max operating junction temperature 150 J Note: for PNP type voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 6.0 C/W thJC 2/8 Doc ID 4171 Rev 6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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