Product Information

STB120N10F4

Name: STB120N10F4
Brand: STMicroelectronics
SKU: STB120N10F4_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB120N10F4 electronic component of STMicroelectronics

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Datasheet

MOSFET POWER MOSFET

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 STB120N10F4 STMicroelectronics	1 : USD 5.343 10 : USD 1.9968 100 : USD 1.7004 500 : USD 1.5382 1000 : USD 1.3744 2000 : USD 1.3525 5000 : USD 1.3525 10000 : USD 1.301 25000 : USD 1.2496		N/A Obsolete

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Additional Infomation About Product

The STB120N10F4 is a N-Channel power MOSFET made by STMicroelectronics. It has a nominal drain-source breakdown voltage of 100 V, a drain peak current of 11 A and a total gate charge of 8 nC. Due to its low gate charge, it has a very low gate voltage driving requirement. It has a maximum operating temperature of 175 °C and a thermal resistance of 1.2 K/W. This MOSFET is suitable for use in switching and amplification tasks in power electronics applications. It is offered in a TO-220AB package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Id - Continuous Drain Current 120 A 120 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 8 mOhms 8 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 300 W 300 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 263 - 3 TO - 263 - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 131 nC 131 nC
Channel Mode Enhancement Enhancement
Series N - Channel Stripfet N - Channel Stripfet
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 1000 1000
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541290000 8541290000
Fall Time 79 ns 79 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 116 ns 116 ns
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-Off Delay Time 111 ns 111 ns
Typical Turn-On Delay Time 32 ns 32 ns