STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order code V R max. I DS DS(on) D STB120NF10T4 STP120NF10 100 V 10.5 m 110 A 2 D PAK TAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3 2 TO-220 2 TO-247 1 1 Applications Figure 1: Internal schematic diagram Switching applications Description D(2, TAB) These Power MOSFETs have been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as G(1) primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. S(3) AM01475v1 noZen Table 1: Device summary Order code Marking Package Packing 2 STB120NF10T4 B120NF10 D PAK Tape and reel STP120NF10 P120NF10 TO-220 Tube STW120NF10 120NF10 TO-247 November 2017 DocID9522 Rev 8 1/19 www.st.com This is information on a product in full production. Contents STB120NF10T4, STP120NF10, STW120NF10 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A2 package information ................................. 9 4.2 DPAK packing information ............................................................. 12 4.3 TO-220 package information ........................................................... 14 4.4 TO-247 package information ........................................................... 16 5 Revision history ............................................................................ 18 2/19 DocID9522 Rev 8