Product Information

STB13N60M2

STB13N60M2 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.197 ea
Line Total: USD 2.2

847 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STB13N60M2
STMicroelectronics

1 : USD 3.0227
10 : USD 2.6221
30 : USD 2.3716
100 : USD 2.115
500 : USD 1.9987
1000 : USD 1.9493

847 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STB13N60M2
STMicroelectronics

1 : USD 2.197
5 : USD 1.937
10 : USD 1.729
26 : USD 1.625
200 : USD 1.56

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Category
Brand Category
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The STB13N60M2 is a power MOSFET produced by STMicroelectronics. It is a N-channel logic level enhancement mode Field Effect Transistor (FET) with low gate charge and low on-state resistance. It is constructed from a double-diffused MOS (DMOS) technology and is packaged in a TO-220AB 4-lead full-pack. The transistor is specifically designed for use in high-efficiency switching applications, such as in an Off-Line and DC-to-DC converters, Motor Control, Power Management and Load Switching. It features low threshold voltage and ultra-low on-resistance to reduce power consumption and increase power efficiency, along with fast switching speeds to ensure maximum power throughput.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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