STB45N60DM2AG Datasheet Automotive-grade N-channel 600 V, 85 m typ., 34 A MDmesh DM2 Power MOSFET in a DPAK package Features TAB V T max. R max. I P Order code DS J DS(on) D TOT STB45N60DM2AG 650 V 93 m 34 A 250 W 2 3 1 AEC-Q101 qualified D P AK Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness G(1) Zener-protected Applications S(3) AM01476v1 tab Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STB45N60DM2AG Product summary Order code STB45N60DM2AG Marking 45N60DM2 Package DPAK Packing Tape and reel DS11105 - Rev 2 - August 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB45N60DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 34 C I A D Drain current (continuous) at T = 100 C 21 C (1) I Drain current (pulsed) 136 A DM P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. 2. I 34 A, di/dt = 800 A/s, V (peak) < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.50 C/W thJC (1) R Thermal resistance, junction-to-board 30 C/W thJB 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive 6 A AR (1) E Single pulse avalanche energy 800 mJ AS 1. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS11105 - Rev 2 page 2/15