Product Information

STB80NF03L-04-1

Name: STB80NF03L-04-1
Brand: STMicroelectronics
SKU: STB80NF03L041_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB80NF03L-04-1 electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch, 30V-0.0035ohms 80A

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.9011 ea
Line Total: USD 3.9

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 20 May to Fri. 24 May MOQ : 1 Multiples : 1 STB80NF03L-04-1 STMicroelectronics	1 : USD 3.9011 10 : USD 3.5013 25 : USD 3.3096

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Additional Infomation About Product

STB80NF03L-04 2 N-channel 30 V, 0.0035 , 80 A, I PAK STripFET II Power MOSFET Features Type V R I DSS DS(on) D STB80NF03L-04 30V < 0.004 80A Exceptional dv/dt capability 100% avalanche tested Low threshold drive 3 2 1 2 Application I PAK Switching applications Automotive Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order codes Marking Package Packaging 2 STB80NF03L-04 80NF03L-04 I PAK Tube October 2009 Doc ID 16325 Rev 1 1/12 www.st.com 12Contents STB80NF03L-04 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 16325 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 80 A 80 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 4 mOhms 4 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 300 W 300 W
Mounting Style Through Hole Through Hole
Package / Case I2PAK - 3 I2PAK - 3
Packaging Tube Tube
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Stb80nf03l - 04 Stb80nf03l - 04
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 95 ns 95 ns
Rise Time 270 ns 270 ns
Factory Pack Quantity : 50 50
Typical Turn-Off Delay Time 110 ns 110 ns
Typical Turn-On Delay Time 30 ns 30 ns