STB80NF10T4

STB80NF10 STP80NF10 2 N-channel 100 V, 0.012 , 80 A, TO-220, D PAK low gate charge STripFET II Power MOSFET Features R DS(on) Type V I DSS D max STP80NF10 100 V < 0.015 80 A STB80NF10 100 V < 0.015 80 A 3 3 Exceptional dv/dt capability 2 1 1 100% Avalanche tested TO-220 DPAK Application oriented characterization Applications Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Table 1. Device summary Order codes Marking Package Packaging STP80NF10 P80NF10 TO-220 Tube STB80NF10T4 B80NF10 DPAK Tape and reel April 2009 Doc ID 6958 Rev 18 1/14 www.st.com 14 Contents STB80NF10, STP80NF10 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuit 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 14 2/14 Doc ID 6958 Rev 18