STB80NF55-06T4 STMicroelectronics

Name: STB80NF55-06T4
Brand: STMicroelectronics
SKU: STB80NF5506T4_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STB80NF55-06T4 electronic component of STMicroelectronics

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STB80NF55-06T4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB80NF55-06T4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	STB80NF55-06T4
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 55 Volt 80 Amp
Datasheet:	STB80NF55-06T4 Datasheet (PDF)

Price (USD)

1000: USD 1.8325 ea
Line Total: USD 1832.5

Availability : 1940

Ship by Fri. 08 Aug to Thu. 14 Aug

Qty Unit Price
1000 $ 1.8325
2000 $ 1.745

STB80NF55-06T4 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 1940

Ship by Fri. 08 Aug to Thu. 14 Aug

MOQ : 1000
Multiples : 1000

Qty Unit Price
1000 $ 1.8325
2000 $ 1.745

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

y y

Id - Continuous Drain Current

80 A 80 A

Vds - Drain-Source Breakdown Voltage

55 V 55 V

Rds On - Drain-Source Resistance

6.5 mOhms 6.5 mOhms

Transistor Polarity

n - channel n - channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

300 W 300 W

Mounting Style

smd/smt smd/smt

Package / Case

D2PAK D2PAK

Packaging

Reel Reel

Technology

si si

Number of Channels

1 channel 1 channel

Vgs - Gate-Source Voltage

20 V 20 V

Channel Mode

enhancement enhancement

Configuration

single single

Series

stb80nf55 stb80nf55

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

80 A 80 A

Drain-Source Breakdown Voltage

55 V 55 V

Forward Transconductance - Min

150 s 150 s

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

300 W 300 W

Rds On

6.5 mohms 6.5 mohms

Fall Time

65 ns 65 ns

Rise Time

155 ns 155 ns

Factory Pack Quantity :

1000 1000

Typical Turn-Off Delay Time

125 ns 125 ns

Height

4.6 mm 4.6 mm

Length

10.4 mm 10.4 mm

Transistor Type

1 n - channel 1 n - channel

Type

mosfet mosfet

Width

9.35 mm 9.35 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

mosfet mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

27 ns 27 ns

Notes:- Show Stocked Products With Similar Attributes.

STB80NF55-06T4 Alternative Parts

We are delighted to provide the STB80NF55-06T4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB80NF55-06T4 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP 2 2 N-channel 55V - 0.005 - 80A - TO-220 /FP - I PAK - D PAK STripFET II Power MOSFET General features Type V R I DSS DS(on) D (1) STB80NF55-06 55V <0.0065 80A 3 3 (1) 2 STB80NF55-06-1 55V <0.0065 80A 2 1 1 (1) STP80NF55-06 55V <0.0065 80A TO-220 TO-220FP (1) STP80NF55-06FP 55V <0.0065 60A 1. Limited by package Exceptional dv/dt capability 3 1 3 2 1 100% avalanche tested DPAK IPAK Application oriented characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STB80NF55-06T4 B80NF55-06 DPAK Tape & reel STB80NF55-06-1 B80NF55-06-1 IPAK Tube STP80NF55-06 P80NF55-06 TO-220 Tube STP80NF55-06FP P80NF55-06FP TO-220FP Tube October 2006 Rev 8 1/17 www.st.com 17Contents STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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