STB8N90K5 STMicroelectronics

STB8N90K5 N-channel 900 V, 0.60 typ., 8 A MDmesh K5 2 Power MOSFET in a D PAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB8N90K5 900 V 0.68 8 A 2 Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing 2 STB8N90K5 8N90K5 D PAK Tape and reel November 2016 DocID030104 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB8N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A package information ................................... 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID030104 Rev 1