Product Information

STB8NM60D

STB8NM60D electronic component of STMicroelectronics

Datasheet
MOSFET N Ch 600V 0.9Ohm 8A
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.3477 ea
Line Total: USD 1347.7

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

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0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1000
Multiples : 1000

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STB8NM60D
STMicroelectronics

1000 : USD 1.7264
2000 : USD 1.7093
3000 : USD 1.6921
4000 : USD 1.6752
5000 : USD 1.6584
6000 : USD 1.6419
10000 : USD 1.6254
20000 : USD 1.6091
50000 : USD 1.593

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Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1000
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STB8NM60D
STMicroelectronics

1000 : USD 2.3184

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Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
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STB8NM60D
STMicroelectronics

1 : USD 4.7221
10 : USD 4.085
100 : USD 3.2841
500 : USD 2.6982

0 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STB8NM60D
STMicroelectronics

1 : USD 4.7221
10 : USD 4.085
100 : USD 3.2841
500 : USD 2.6982

0 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1000
Multiples : 1000

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STB8NM60D
STMicroelectronics

1000 : USD 1.3477
2000 : USD 1.2479
3000 : USD 1.2479
4000 : USD 1.2479

0 - WHS 6


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
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STB8NM60D
STMicroelectronics

1 : USD 7.6636
10 : USD 2.7651
25 : USD 2.6098

0 - WHS 7


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1

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STB8NM60D
STMicroelectronics

5 : USD 1.6188

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STB8NM60D STP8NM60D 2 N-CHANNEL 600V - 0.9 - 8A - TO-220/D PAK Fast Diode MDmesh Power MOSFET General features Type V R I P DSS DS(on) D TOT STB8NM60D 600V < 1.0 8A 100W STP8NM60D 600V < 1.0 8A 100W High dv/dt and avalanche capabilities 3 3 2 1 1 100% avalanche rated DPAK TO-220 Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode Description The FDmesh associates all advantages of Internal schematic diagram reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Applications The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Order codes Sales Type Marking Package Packaging STB8NM60D B8NM60D DPAK TAPE & REEL STP8NM60D P8NM60D TO-220 TUBE February 2006 Rev2 1/13 www.st.com 13Electrical ratings STB8NM60D - STP8NM60D 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-Source Voltage (V = 0) 600 V DS GS V Drain-gate Voltage (R = 20k)600 V DGR GS V Gate-Source Voltage 30 V GS I Drain Current (continuous) at T = 25C 8 A D C I Drain Current (continuous) at T =100C 5 A D C (1) I Drain Current (pulsed) 32 A DM P Total Dissipation at T = 25C 100 W TOT C Derating Factor 0.8 W/C (2) dv/dt Peak Diode Recovery voltage slope 20 V/ns T Operating Junction Temperature J -65 to 150 C Storage Temperature T stg 1. Pulse width limited by safe operating area 2. I 5A, di/dt 400A/s, V =80%V SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 1.25 C/W thj-case R Thermal resistance junction-ambient Max 62.5 C/W thj-amb Maximum lead temperature for soldering T 300 C l purpose Table 3. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not I 2.5 A AR repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting E 200 mJ AS Tj=25C, I =I , V =50V) D AR DD 2/13 Rev2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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