Product Information

STD100N10LF7AG

STD100N10LF7AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 100 V 5 mOhm typ. 80 A STripFET F7 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

Stock Image

STD100N10LF7AG
STMicroelectronics

2500 : USD 2.7739
25000 : USD 2.5038
250000 : USD 1.5775
1250000 : USD 1.0958
2500000 : USD 1.0915
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STD100N10LF7AG
STMicroelectronics

1 : USD 5.2333
10 : USD 1.8523
100 : USD 1.6112
500 : USD 1.5224
1000 : USD 1.3448
2500 : USD 1.3194
5000 : USD 1.3194
10000 : USD 1.2687
25000 : USD 1.2192
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STD100N10LF7AG Automotive-grade N-channel 100 V, 5 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD100N10LF7AG 100 V 9 m 80 A Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss Figure 1: Internal schematic diagram High avalanche ruggedness Applications D(2, TAB) Switching applications Description This N-channel Power MOSFET utilizes G(1) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more S(3) efficient switching. AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD100N10LF7AG 100N10LF7 DPAK Tape and reel June 2016 DocID029501 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD100N10LF7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package mechanical data ........................ 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID029501 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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