Product Information

STD105N10F7AG

STD105N10F7AG electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 1.2769 ea
Line Total: USD 7.66

203 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 6  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
203 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

STD105N10F7AG
STMicroelectronics

1 : USD 1.2769
10 : USD 1.2514
25 : USD 1.2514
100 : USD 1.2514

11 - WHS 2


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

STD105N10F7AG
STMicroelectronics

1 : USD 6.1082
10 : USD 5.3329
30 : USD 4.8717
100 : USD 4.4045
500 : USD 4.1891
1000 : USD 4.0924

203 - WHS 3


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 6
Multiples : 1

Stock Image

STD105N10F7AG
STMicroelectronics

6 : USD 1.2769
10 : USD 1.2514

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STD105N10F7AG Automotive-grade N-channel 100 V, 6.8 m typ., 80 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. DS DS(on) ID PTOT STD105N10F7AG 100 V 8 m 80 A 120 W Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss Figure 1: Internal schematic diagram High avalanche ruggedness Applications D(2, TAB) Switching applications Description This N-channel Power MOSFET utilizes G(1) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more S(3) efficient switching. AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD105N10F7AG 105N10F7 DPAK Tape and reel June 2016 DocID027071 Rev 4 1/14 www.st.com This is information on a product in full production. Contents STD105N10F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 5 Revision history ............................................................................ 13 2/14 DocID027071 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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