Product Information

STD10NM60N

STD10NM60N electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3219 ea
Line Total: USD 1.32

396 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
396 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STD10NM60N
STMicroelectronics

1 : USD 1.3219
10 : USD 1.1227
30 : USD 1.0141
100 : USD 0.8918
500 : USD 0.7617
1000 : USD 0.736

2369 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STD10NM60N
STMicroelectronics

1 : USD 1.053
5 : USD 0.9438
20 : USD 0.8151
55 : USD 0.7709
500 : USD 0.741

2277 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1

Stock Image

STD10NM60N
STMicroelectronics

5 : USD 1.8018
10 : USD 1.7329
25 : USD 1.7134
100 : USD 1.6939
250 : USD 1.66

2804 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 6
Multiples : 1

Stock Image

STD10NM60N
STMicroelectronics

6 : USD 1.4717
10 : USD 1.4479
25 : USD 1.4242
100 : USD 1.4004
250 : USD 1.3724

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Kind Of Package
LoadingGif

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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features % V T R DS J DS(on) Order code I P D TOT max. max. STD10NM60N 70 W STF10NM60N 25 W DPAK TO-220FP 650 V 0.55 10 A STP10NM60N % 70 W STU10NM60N % 100% avalanche tested Low input capacitance and gate charge IPAK TO-220 Low gate input resistance Figure 1. Internal schematic diagram Applications Switching applications % 7 Description These devices are N-channel Power MOSFETs developed using the second generation of * MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is 6 therefore suitable for the most demanding high efficiency converters. 0 Y Table 1. Device summary Order code Marking Package Packing STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube December 2015 DocID028726 Rev 1 1/28 This is information on a product in full production. www.st.com 7 7 7 Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package information 10 4.1 STD10NM60N, DPAK (TO-252) package information . 10 4.2 STF10NM60N, TO-220FP package information . 17 4.3 STP10NM60N, TO-220 package information 19 4.4 STU10NM60N, IPAK (TO-251) 21 5 Packing information 25 6 Revision history . 27 2/28 DocID028726 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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