Product Information

STD10NM60ND

STD10NM60ND electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 0.7515 ea
Line Total: USD 6.76

32 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 9  Multiples: 1
Pack Size: 1

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32 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 9
Multiples : 1

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STD10NM60ND
STMicroelectronics

9 : USD 0.5279

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 , 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) Features V R TAB DSS DS(on) Order codes I P D TOT T max max. J 3 STD10NM60ND 70 W 1 3 2 STF10NM60ND 650 V < 0.6 8 A 25 W 1 TO-220FP DPAK STP10NM60ND 70 W TAB 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-220 Extremely high dv/dt avalanche capabilities Applications Figure 1. Internal schematic diagram Switching applications Description 4 This FDmesh II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on- resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STD10NM60ND DPAK Tape and reel STF10NM60ND 10NM60ND TO-220FP Tube STP10NM60ND TO-220 November 2011 Doc ID 18467 Rev 2 1/19 www.st.com 19 Contents STD10NM60ND, STF10NM60ND, STP10NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/19 Doc ID 18467 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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