STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 , 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) Features V R TAB DSS DS(on) Order codes I P D TOT T max max. J 3 STD10NM60ND 70 W 1 3 2 STF10NM60ND 650 V < 0.6 8 A 25 W 1 TO-220FP DPAK STP10NM60ND 70 W TAB 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-220 Extremely high dv/dt avalanche capabilities Applications Figure 1. Internal schematic diagram Switching applications Description 4 This FDmesh II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on- resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STD10NM60ND DPAK Tape and reel STF10NM60ND 10NM60ND TO-220FP Tube STP10NM60ND TO-220 November 2011 Doc ID 18467 Rev 2 1/19 www.st.com 19 Contents STD10NM60ND, STF10NM60ND, STP10NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/19 Doc ID 18467 Rev 2