Product Information

STD10PF06T4

STD10PF06T4 electronic component of STMicroelectronics

Datasheet
MOSFET P-Ch 60 Volt 10 Amp
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5312 ea
Line Total: USD 1.53

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STD10PF06T4
STMicroelectronics

1 : USD 3.6288

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STD10PF06T4
STMicroelectronics

1 : USD 1.5312
50 : USD 0.694
100 : USD 0.6209
250 : USD 0.5296
500 : USD 0.4748

0 - WHS 3


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STD10PF06T4
STMicroelectronics

1 : USD 0.904
10 : USD 0.6761
30 : USD 0.634
100 : USD 0.5919
500 : USD 0.5746
1000 : USD 0.5647
5000 : USD 0.5421

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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Additional Infomation About Product

STD10PF06 P-CHANNEL 60V - 0.18 - 10A IPAK/DPAK STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STD10PF06 60 V < 0.20 10 A TYPICAL R (on) = 0.18 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED 1 CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX -1 ) (Suffix -1) (Suffix T4) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) INTERNAL SCHEMATIC DIAGRAM DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 60 V DS GS V Drain-gate Voltage (R = 20 k) 60 V DGR GS V GS Gate- source Voltage 20 V I Drain Current (continuous) at T = 25C 10 A D C I Drain Current (continuous) at T = 100C 7A D C I ) Drain Current (pulsed) 40 A DM( P Total Dissipation at T = 25C 40 W tot C Derating Factor 0.27 W/C (1) dv/dt Peak Diode Recovery voltage slope 6 V/ns T Storage Temperature -65 to 175 C stg T Max. Operating Junction Temperature 175 C j ) Pulse width limited by safe operating area. (1) I 10A, di/dt 300A/s, V V , T T ( SD DD (BR)DSS j JMAX Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed March 2002 1/9 .STD10PF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.75 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W T Maximum Lead Temperature For Soldering Purpose 275 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit Avalanche Current, Repetitive or Not-Repetitive I AR 10 A (pulse width limited by T max) j Single Pulse Avalanche Energy E AS 125 mJ (starting T = 25 C, I = I , V = 25 V) j D AR DD ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit I = 250 A, V = 0 V Drain-source 60 V D GS (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating I DS 1 A DSS Drain Current (V = 0) GS V = Max Rating T = 125C 10 A DS C Gate-body Leakage V = 20V I GS 1 A GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A24V GS(th) DS GS D V = 10 V I = 5 A R Static Drain-source On 0.18 0.20 DS(on) GS D Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 25 V I =5 A 25 S DS D fs C Input Capacitance V = 25 V f = 1 MHz V = 0 850 pF iss DS GS Output Capacitance 230 pF C oss Reverse Transfer 75 pF C rss Capacitance 2/9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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