STD11NM50N STMicroelectronics

STD11NM50N N-channel 500 V, 0.40 typ., 8.5 A MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code V T max R max I DS J DS(on) D % STD11NM50N 550 V 0.47 8.5 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 . Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the * companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 6& Table 1. Device summary Order code Marking Package Packaging STD11NM50N 11NM50N DPAK Tape and reel November 2015 DocID028674 Rev 1 1/15 This is information on a product in full production. www.st.com 7 Contents STD11NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 DPAK type A package information . 9 4.2 DPAK type E package information .11 5 Revision history . 14 2/15 DocID028674 Rev 1