Product Information

STD11N60DM2

STD11N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.814 ea
Line Total: USD 0.81

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 1

Stock Image

STD11N60DM2
STMicroelectronics

2500 : USD 1.1385
3000 : USD 1.1271
4000 : USD 1.1158
5000 : USD 1.1048
6000 : USD 1.0937
10000 : USD 1.0827
20000 : USD 1.0718
25000 : USD 1.0612
50000 : USD 1.0505

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STD11N60DM2
STMicroelectronics

1 : USD 4.971
10 : USD 1.802
25 : USD 1.6984

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
STD11N65M2 electronic component of STMicroelectronics STD11N65M2

STMicroelectronics MOSFET
Stock : 4950

STD11NM60ND electronic component of STMicroelectronics STD11NM60ND

Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; DPAK
Stock : 0

STD120N4LF6 electronic component of STMicroelectronics STD120N4LF6

MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
Stock : 0

STD12N50DM2 electronic component of STMicroelectronics STD12N50DM2

MOSFET PTD HIGH VOLTAGE
Stock : 0

STD11N65M5 electronic component of STMicroelectronics STD11N65M5

MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh V MOS
Stock : 2500

STD127DT4 electronic component of STMicroelectronics STD127DT4

Bipolar Transistors - BJT High VTG fast switch NPN pwr transistor
Stock : 0

STD120N4F6 electronic component of STMicroelectronics STD120N4F6

MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
Stock : 2265

STD11NM50N electronic component of STMicroelectronics STD11NM50N

MOSFET POWER MOSFET N-CH 500V
Stock : 2497

STD11N60M2-EP electronic component of STMicroelectronics STD11N60M2-EP

MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package
Stock : 0

STD11NM65N electronic component of STMicroelectronics STD11NM65N

MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II
Stock : 840

Image Description
FCPF190N65S3L1 electronic component of ON Semiconductor FCPF190N65S3L1

MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
Stock : 0

STB41N40DM6AG electronic component of STMicroelectronics STB41N40DM6AG

MOSFET PTD HIGH VOLTAGE
Stock : 0

FCH023N65S3-F155 electronic component of ON Semiconductor FCH023N65S3-F155

MOSFET SuperFET3 650V 23 mOhm
Stock : 168

CSD25501F3 electronic component of Texas Instruments CSD25501F3

MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Stock : 1885

FCH040N65S3-F155 electronic component of ON Semiconductor FCH040N65S3-F155

MOSFET SuperFET3 650V 40 mOhm
Stock : 0

ALD310702SCL electronic component of Advanced Linear Devices ALD310702SCL

MOSFET Quad P-Channel EPAD Matched Pair
Stock : 0

ALD310700ASCL electronic component of Advanced Linear Devices ALD310700ASCL

MOSFET Quad P-Channel EPAD Matched Pair
Stock : 0

STB80NF55-08AG electronic component of STMicroelectronics STB80NF55-08AG

MOSFET Automotive-grade N-channel 55 V, 6.5 mOhm typ., 80 A STripFET Power MOSFET in a D2PAK package
Stock : 897

LSIC1MO170E1000 electronic component of Littelfuse LSIC1MO170E1000

MOSFET 1700V 1000mOhm SiC MOSFET
Stock : 0

FDBL86566-F085 electronic component of ON Semiconductor FDBL86566-F085

MOSFET 60V N-Channel Power Trench MOSFET
Stock : 0

STD11N60DM2 Datasheet N-channel 600 V, 370 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package Order code V T R max. I P DS Jmax DS(on) D TOT TAB STD11N60DM2 650 V 420 m 10 A 110 W Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zener-protected Applications Switching applications G(1) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr NG1D2TS3Z with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD11N60DM2 Product summary Order code STD11N60DM2 Marking 11N60DM2 Package DPAK Packing Tape and reel DS11674 - Rev 2 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD11N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 10 case I A D Drain current (continuous) at T = 100 C 6.3 case (1) I Drain current (pulsed) 40 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 10 A, di/dt=900 A/s V peak < V ,V = 400 V SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1 inch FR-4 board, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 2.5 A AR (2) E Single pulse avalanche energy 250 mJ AS 1. pulse width limited by T jmax 2. starting T = 25 C, I = I , V = 50 V. j D AR DD DS11674 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted