STD11N60M2-EP Datasheet N-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 Very low turn-off switching losses 100% avalanche tested DPAK Zener-protected D(2, TAB) Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM01475V1 improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STD11N60M2-EP Product summary Order code STD11N60M2-EP Marking 11N60M2EP Package DPAK Packing Tape and Reel DS10957 - Rev 3 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD11N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 7.5 A D C I Drain current (continuous) at T = 100 C 4.7 A D C (1) I Drain current (pulsed) 30 A DM P Total dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 7.5 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.47 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetetive or not repetitive I 2.4 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 115 mJ AS (starting T = 25 C, I = I V = 50 V) j D AR DD DS10957 - Rev 3 page 2/17