STD14NM50N STMicroelectronics

STD14NM50N Automotive-grade N-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code V T R max I DS Jmax DS(on) D STD14NM50N 550 V 0.32 12 A % Designed for automotive applications and AEC-Q101 qualified 100% avalanche tested Low input capacitance and gate charge . 3 Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET % 7 developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STD14NM50N 14NM50N DPAK Tape and reel September 2015 DocID026625 Rev 3 1/16 This is information on a product in full production. www.st.com 7 Contents STD14NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 DPAK package information . 10 5 Packing mechanical data 13 6 Revision history . 15 2/16 DocID026625 Rev 3