Product Information

STD37P3H6AG

STD37P3H6AG electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STD37P3H6AG
STMicroelectronics

1 : USD 4.3274
10 : USD 1.5248
100 : USD 1.1006
500 : USD 0.9317
1000 : USD 0.748
5000 : USD 0.6796
10000 : USD 0.6486
25000 : USD 0.6283
N/A

Obsolete
0 - WHS 2

MOQ : 10
Multiples : 1

Stock Image

STD37P3H6AG
STMicroelectronics

10 : USD 2.8927
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STD37P3H6AG Automotive-grade P-channel -30 V, 11 m typ., -49 A STripFET H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD37P3H6AG -30 V 15 m -49 A 60 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Figure 1: Internal schematic diagram Low gate drive power loss D(2, TAB) Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology G(1) with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD37P3H6AG 37P3H6 DPAK Tape and Reel August 2015 DocID027952 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD37P3H6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027952 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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