Product Information

STD10NM65N

STD10NM65N electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Channel 650V Power MDmesh
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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STD10NM65N
STMicroelectronics

1 : USD 2.5989
10 : USD 2.3576
100 : USD 1.9217
500 : USD 1.5251
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

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STD10NM65N
STMicroelectronics

1 : USD 1.9812
10 : USD 1.6926
100 : USD 1.3494
500 : USD 1.1856
N/A

Obsolete
0 - WHS 3

MOQ : 2500
Multiples : 1

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STD10NM65N
STMicroelectronics

2500 : USD 2.191
N/A

Obsolete
0 - WHS 4

MOQ : 2500
Multiples : 2500

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STD10NM65N
STMicroelectronics

2500 : USD 0.8042
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

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STD10NM65N
STMicroelectronics

1 : USD 1.5873
10 : USD 1.3513
100 : USD 1.0796
500 : USD 0.9438
1000 : USD 0.9334
2500 : USD 0.8824
5000 : USD 0.8487
10000 : USD 0.8162
25000 : USD 0.7838
N/A

Obsolete
0 - WHS 6

MOQ : 19
Multiples : 1

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STD10NM65N
STMicroelectronics

19 : USD 2.2723
25 : USD 2.2383
100 : USD 2.2044
250 : USD 2.1692
500 : USD 2.1353
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

STD10NM65N Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh II Power MOSFET in a DPAK package Features V DS TAB Order code R max. I DS(on) D T jmax. 3 2 1 STD10NM65N 710 V 0.48 9 A DPAK 100% avalanche tested Low input capacitance and gate charge D(2, TAB) Low gate input resistance Applications G(1) Switching applications S(3) AM01475v1 noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD10NM65N Product summary Order code STD10NM65N Marking 10NM65N Package DPAK Packing Tape and reel DS5566 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD10NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 5.7 A D C (1) I Drain current (pulsed) 36 A DM P Total dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns dv/dt Drain-source voltage slope (V = 520 V, I = 9 A, V = 10 V) 25 DD D GS T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 9 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AS j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AS DD DS5566 - Rev 4 page 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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