Product Information

STD10NM65N

STD10NM65N electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Channel 650V Power MDmesh
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STD10NM65N
STMicroelectronics

1 : USD 2.5189
10 : USD 2.2851
100 : USD 1.8626
500 : USD 1.4782
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STD10NM65N
STMicroelectronics

1 : USD 1.9202
10 : USD 1.6405
100 : USD 1.3079
500 : USD 1.1491
N/A

Obsolete
0 - WHS 3

MOQ : 2500
Multiples : 1

Stock Image

STD10NM65N
STMicroelectronics

2500 : USD 2.1236
N/A

Obsolete
0 - WHS 4

MOQ : 2500
Multiples : 2500

Stock Image

STD10NM65N
STMicroelectronics

2500 : USD 0.7794
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

STD10NM65N
STMicroelectronics

1 : USD 1.5385
10 : USD 1.3098
100 : USD 1.0464
500 : USD 0.9148
1000 : USD 0.9046
2500 : USD 0.8552
5000 : USD 0.8226
10000 : USD 0.7911
25000 : USD 0.7597
N/A

Obsolete
0 - WHS 6

MOQ : 19
Multiples : 1

Stock Image

STD10NM65N
STMicroelectronics

19 : USD 2.2024
25 : USD 2.1694
100 : USD 2.1366
250 : USD 2.1025
500 : USD 2.0696
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Stmicroelectronics"

Image Description
STD110N8F6 electronic component of STMicroelectronics STD110N8F6

MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
Stock : 2470

STD11N65M2 electronic component of STMicroelectronics STD11N65M2

STMicroelectronics MOSFET
Stock : 4950

STD10P10F6 electronic component of STMicroelectronics STD10P10F6

MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
Stock : 17500

STD11N65M5 electronic component of STMicroelectronics STD11N65M5

MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh V MOS
Stock : 2500

STD10PF06-1 electronic component of STMicroelectronics STD10PF06-1

P-Channel 60 V 10A (Tc) 40W (Tc) Through Hole I-PAK
Stock : 99967

STD11N60M2-EP electronic component of STMicroelectronics STD11N60M2-EP

MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package
Stock : 0

STD11N50M2 electronic component of STMicroelectronics STD11N50M2

Transistor: N-MOSFET; unipolar; 500V; 5A; 85W; DPAK
Stock : 0

STD10PF06T4 electronic component of STMicroelectronics STD10PF06T4

MOSFET P-Ch 60 Volt 10 Amp
Stock : 0

STD10P6F6 electronic component of STMicroelectronics STD10P6F6

Transistor: P-MOSFET; unipolar; -60V; -7.2A; 35W; DPAK
Stock : 5000

STD11N60DM2 electronic component of STMicroelectronics STD11N60DM2

MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
Stock : 0

More Products By Category "MOSFET"

Image Description
STD10NM60ND electronic component of STMicroelectronics STD10NM60ND

STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
Stock : 34

STD10NM60N electronic component of STMicroelectronics STD10NM60N

Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Stock : 409

STD10N60M2 electronic component of STMicroelectronics STD10N60M2

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh II
Stock : 2198

STB95N4F3 electronic component of STMicroelectronics STB95N4F3

MOSFET N-Ch 40V 5.0mOhm 80A STripFET III
Stock : 1916

STB8N65M5 electronic component of STMicroelectronics STB8N65M5

Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK
Stock : 15

STB85NF55LT4 electronic component of STMicroelectronics STB85NF55LT4

STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp
Stock : 0

STB80NF55-08T4 electronic component of STMicroelectronics STB80NF55-08T4

MOSFET N-Ch 55 Volt 80 Amp
Stock : 0

STB80NF55-06-1 electronic component of STMicroelectronics STB80NF55-06-1

STMicroelectronics MOSFET N-Ch, 55V-0.005ohms 80A
Stock : 0

STB75NF75T4 electronic component of STMicroelectronics STB75NF75T4

STMicroelectronics MOSFET N-Ch, 75V-0.0095ohms 80A
Stock : 2000

STB6NK90ZT4 electronic component of STMicroelectronics STB6NK90ZT4

MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH
Stock : 3113

Additional Infomation About Product

STD10NM65N Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh II Power MOSFET in a DPAK package Features V DS TAB Order code R max. I DS(on) D T jmax. 3 2 1 STD10NM65N 710 V 0.48 9 A DPAK 100% avalanche tested Low input capacitance and gate charge D(2, TAB) Low gate input resistance Applications G(1) Switching applications S(3) AM01475v1 noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD10NM65N Product summary Order code STD10NM65N Marking 10NM65N Package DPAK Packing Tape and reel DS5566 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD10NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 5.7 A D C (1) I Drain current (pulsed) 36 A DM P Total dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns dv/dt Drain-source voltage slope (V = 520 V, I = 9 A, V = 10 V) 25 DD D GS T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 9 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AS j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AS DD DS5566 - Rev 4 page 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted