STD47N10F7AG STMicroelectronics

STD47N10F7AG Automotive-grade N-channel 100 V, 12.5 m typ., 45 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STD47N10F7AG 100 V 18 m 45 A 60 W AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity Figure 1: Internal schematic diagram High avalanche ruggedness Applications D(2, TAB) Switching applications Description This N-channel Power MOSFET utilizes G(1) STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more S(3) efficient switching. AM01475v1 noZen Table 1: Device summary Order code Marking Package Packing STD47N10F7AG 47N10F7 DPAK Tape and reel February 2017 DocID027183 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STD47N10F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027183 Rev 3