STD4LN80K5 STMicroelectronics

STD4LN80K5 N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD4LN80K5 800 V 2.6 3 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) DPAK Ultra low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for application requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STD4LN80K5 4LN80K5 DPAK Tape and reel May 2016 DocID027848 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STD4LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information..................................... 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027848 Rev 2