STD9NM40N STMicroelectronics

STD9NM40N, STP9NM40N N-channel 400 V, 0.73 typ., 5.6 A MDmesh II Power MOSFET in DPAK and TO-220 packages Datasheet production data Features Order codes V T R max. I DSS JMAX DS(on) D STD9NM40N TAB 450 V < 0.79 5.6 A STP9NM40N TAB 3 100% avalanche tested 3 1 2 1 Low input capacitance and gate charge DPAK TO-220 Low gate input resistance Applications Switching applications Description Figure 1. Internal schematic diagram These devices are N-channel Power MOSFETs developed using the second generation of 4 MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Packages Packaging STD9NM40N DPAK Tape and reel 9NM40N STP9NM40N TO-220 Tube December 2012 Doc ID 023762 Rev 2 1/18 This is information on a product in full production. www.st.com 18Contents STD9NM40N, STP9NM40N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 17 2/18 Doc ID 023762 Rev 2