STDRIVEG600 Datasheet High voltage half-bridge gate driver for GaN transistors Features dV/dt immunity 200 V/ns Driver current capability: 1.3/2.4 A source/sink typ 25 C, 6 V 5.5/6 A source/sink typ 25 C, 15 V Separated turn on and turn off gate driver pins SO-16 45 ns propagation delay with tight matching 3.3 V, 5 V TTL/CMOS inputs with hysteresis Interlocking function UVLO on low-side and high-side sections Dedicated pin for shut down functionality Over temperature protection Applications High-voltage PFC, DC-DC and DC-AC converters Switch-mode power supplies UPS systems Solar power Motor driver for home appliances, factory automation and industrial drives. Product status link Description STDRIVEG600 The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET. Product label The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V. The STDRIVEG600 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP. DS13548 - Rev 1 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STDRIVEG600 Block diagram 1 Block diagram Figure 1. STDRIVEG600 block diagram VCC BOOT VCC UVLO Vbo UVLO HON Driver LIN HOFF Level Shifter Logic, interlocking, HIN OUT overtemp PVCC LON SD/OD Driver Level Shifter LOFF SGND PGND DS13548 - Rev 1 page 2/27