Product Information

STE250NS10

Name: STE250NS10
Brand: STMicroelectronics
SKU: STE250NS10_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STE250NS10 electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch 100 Volt 220 A

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 49.14 ea
Line Total: USD 49.14

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1 Multiples : 1 STE250NS10 STMicroelectronics	1 : USD 49.14 2 : USD 46.4958 5 : USD 41.3829 10 : USD 37.4049 20 : USD 34.8894

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Additional Infomation About Product

STE250NS10 N-channel 100 V, 0.0045 , 220 A, ISOTOP STripFET Power MOSFET Features Type V R I DSS DS(on) D STE250NS10 100 V <0.0055 220 A Standard threshold drive 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of STMicroelectronics uniquesingle feature siz strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and Figure 1. Internal schematic diagram less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Table 1. Device summary Order code Marking Package Packaging STE250NS10 E250NS10 ISOTOP Tube March 2010 Doc ID 8220 Rev 3 1/14 www.st.com 14Contents STE250NS10 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Mounting information . 11 5.1 Mounting on heatsink 11 6 Revision history . 13 2/14 Doc ID 8220 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 220 A 220 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 5.5 mOhms 5.5 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 500 W 500 W
Mounting Style Through Hole Through Hole
Package / Case ISO TO P - 4 ISO TO P - 4
Packaging Tube Tube
Channel Mode Enhancement Enhancement
Configuration Single Dual Source Single Dual Source
Series Ste250ns10 Ste250ns10
Brand Stmicroelectronics Stmicroelectronics
Forward Transconductance - Min 60 S 60 S
Fall Time 300 ns 300 ns
Rise Time 380 ns 380 ns
Factory Pack Quantity : 10 10
Typical Turn-Off Delay Time 1100 ns 1100 ns