STF26NM60N STMicroelectronics

STF26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max I DS DS(on) D STF26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications TO-220FP Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of D(2) MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high G(1) efficiency converters. S(3) AM01475v1 noTab noZen Table 1: Device summary Order code Marking Package Packaging STF26NM60N 26NM60N TO-220FP Tube December 2016 DocID030178 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STF26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID030178 Rev 1